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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Memory evolution: Multi-functioning unified-random access memory (URAM)

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dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorHan, J.-W.ko
dc.date.accessioned2009-10-08T02:33:58Z-
dc.date.available2009-10-08T02:33:58Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-10-20-
dc.identifier.citation2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, pp.831 - 834-
dc.identifier.urihttp://hdl.handle.net/10203/11705-
dc.description.sponsorshipThis work was supported by the National Research Program for the 0.1-Terabit Nonvolatile Memory Development, sponsored by the Ministry of Knowledge Economy. The authors wish to thank all staff of the National Nanofab Center for their unwavering support of device fabrication.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleMemory evolution: Multi-functioning unified-random access memory (URAM)-
dc.typeConference-
dc.identifier.wosid000265971001053-
dc.identifier.scopusid2-s2.0-60649113470-
dc.type.rimsCONF-
dc.citation.beginningpage831-
dc.citation.endingpage834-
dc.citation.publicationname2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008-
dc.identifier.conferencecountryCC-
dc.identifier.conferencelocationBeijing-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHan, J.-W.-
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EE-Conference Papers(학술회의논문)
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