Effect of process conditions on the removal of native oxide in wafer cleaning process employing UV excited NF3/H2

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dc.contributor.author권성구-
dc.contributor.author김도현-
dc.date.accessioned2013-03-15T06:20:38Z-
dc.date.available2013-03-15T06:20:38Z-
dc.date.created2012-02-06-
dc.date.issued1996-11-
dc.identifier.citationKMRS Fall Symposium, v., no., pp.152 - 153-
dc.identifier.urihttp://hdl.handle.net/10203/116956-
dc.languageKOR-
dc.titleEffect of process conditions on the removal of native oxide in wafer cleaning process employing UV excited NF3/H2-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage152-
dc.citation.endingpage153-
dc.citation.publicationnameKMRS Fall Symposium-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor김도현-
dc.contributor.nonIdAuthor권성구-
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CBE-Conference Papers(학술회의논문)
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