Short Channel Effects in N- and P- Channel Polysilicon Thin Film Transistors with Very Thin ECR N2O Plasma Gate Dielectrics
- Issue Date
- 1997
- Language
- ENG
- Citation
The International Conference on Solid State Devices and Materials, pp.372 - 373
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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