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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

InP/InGaAs HBTs using crystallographically defined emitter contact technology

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dc.contributor.authorKim, M.ko
dc.contributor.authorJeon, S. K.ko
dc.contributor.authorShin, S. H.ko
dc.contributor.authorYang, Kyounghoonko
dc.contributor.authorKwon, Young Seko
dc.date.accessioned2007-08-30T06:29:12Z-
dc.date.available2007-08-30T06:29:12Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-06-08-
dc.identifier.citation2003 IEEE MTT-S International Microwave Symposium Digest, pp.1279 - 1282-
dc.identifier.urihttp://hdl.handle.net/10203/1165-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleInP/InGaAs HBTs using crystallographically defined emitter contact technology-
dc.typeConference-
dc.identifier.wosid000184045100350-
dc.identifier.scopusid2-s2.0-0043093901-
dc.type.rimsCONF-
dc.citation.beginningpage1279-
dc.citation.endingpage1282-
dc.citation.publicationname2003 IEEE MTT-S International Microwave Symposium Digest-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationPhiladelphia, PA-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorKim, M.-
dc.contributor.nonIdAuthorJeon, S. K.-
dc.contributor.nonIdAuthorShin, S. H.-
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