ECR O2-N2O Plasma Thermal Oxide and Its Application to Polysilicon Thin Film Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-15T01:32:17Z | - |
| dc.date.available | 2013-03-15T01:32:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | 9th Hungarian-Korean Seminar, v., no., pp.241 - 250 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/115467 | - |
| dc.language | ENG | - |
| dc.title | ECR O2-N2O Plasma Thermal Oxide and Its Application to Polysilicon Thin Film Transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 241 | - |
| dc.citation.endingpage | 250 | - |
| dc.citation.publicationname | 9th Hungarian-Korean Seminar | - |
| dc.identifier.conferencecountry | Hungary | - |
| dc.identifier.conferencecountry | Hungary | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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