120-G Hz-Bandwidth Characterization of Microwave Passive Devices Using External Silicon-On-Sapphire Photoconductive Sampling Probe
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Joungho | - |
| dc.contributor.author | Son, J. | - |
| dc.contributor.author | Wakana, S. | - |
| dc.contributor.author | Whitaker, J. | - |
| dc.date.accessioned | 2013-03-15T01:08:14Z | - |
| dc.date.available | 2013-03-15T01:08:14Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | Ultrafast Electronics and Optoelectronics, v., no., pp.224 - 227 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/115276 | - |
| dc.language | ENG | - |
| dc.title | 120-G Hz-Bandwidth Characterization of Microwave Passive Devices Using External Silicon-On-Sapphire Photoconductive Sampling Probe | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 224 | - |
| dc.citation.endingpage | 227 | - |
| dc.citation.publicationname | Ultrafast Electronics and Optoelectronics | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Kim, Joungho | - |
| dc.contributor.nonIdAuthor | Son, J. | - |
| dc.contributor.nonIdAuthor | Wakana, S. | - |
| dc.contributor.nonIdAuthor | Whitaker, J. | - |
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