DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hee Chul | - |
dc.contributor.author | Ishiwara, H | - |
dc.contributor.author | Kanemaru, S | - |
dc.contributor.author | Furukawa, S | - |
dc.date.accessioned | 2013-03-15T00:46:56Z | - |
dc.date.available | 2013-03-15T00:46:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1987 | - |
dc.identifier.citation | Proc. 2nd Int. Symp. on Si MBE, ed. by J .C .Bean and L . J . Schowalter(the Electrochemical, v., no., pp.182 - 190 | - |
dc.identifier.uri | http://hdl.handle.net/10203/115141 | - |
dc.language | ENG | - |
dc.title | Growth of Ge and GaAs Films on Electron-Beam Exposed CaF2/Si(111)Structures | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 182 | - |
dc.citation.endingpage | 190 | - |
dc.citation.publicationname | Proc. 2nd Int. Symp. on Si MBE, ed. by J .C .Bean and L . J . Schowalter(the Electrochemical | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Ishiwara, H | - |
dc.contributor.nonIdAuthor | Kanemaru, S | - |
dc.contributor.nonIdAuthor | Furukawa, S | - |
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