The Effect of Si-SiO2 Interface on the Excess Point Defect Distribution in Silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Choong Ki | - |
| dc.date.accessioned | 2013-03-14T23:05:06Z | - |
| dc.date.available | 2013-03-14T23:05:06Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1984 | - |
| dc.identifier.citation | Symposium on Semiconductor Processing,ASTM/SEMI Meeting, v., no., pp.283 - 293 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/114350 | - |
| dc.language | ENG | - |
| dc.title | The Effect of Si-SiO2 Interface on the Excess Point Defect Distribution in Silicon | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 283 | - |
| dc.citation.endingpage | 293 | - |
| dc.citation.publicationname | Symposium on Semiconductor Processing,ASTM/SEMI Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Kim, Choong Ki | - |
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