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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

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dc.contributor.authorHa, YHko
dc.contributor.authorKim, Sehunko
dc.contributor.authorLee, SYko
dc.contributor.authorKim, JHko
dc.contributor.authorBaek, DHko
dc.contributor.authorKim, HKko
dc.contributor.authorMoon, DWko
dc.date.accessioned2009-09-21T07:25:05Z-
dc.date.available2009-09-21T07:25:05Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-06-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.74, no.23, pp.3510 - 3512-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/11397-
dc.description.abstractIt was clearly observed with medium energy ion scattering spectroscopy that the strain in the Si(001)-SiO2 interface of thermal oxides is relaxed by annealing in N2O. The strain relaxation could be correlated with the improved hot-electron hardness of the nitrided oxides compared with the thermal oxides. Based on the direct observation of the strain relaxation, it is suggested that the incorporated N atoms at the interface release the strain and increase the immunity of trap generation under the current stress. (C) 1999 American Institute of Physics. [S0003-6951(99)04523-4].-
dc.description.sponsorshipFinancial support from the Center for Molecular Science, Korea, and the Ministry of Science and Technology, Korea through Nanostructure Technology Project is acknowledgeden
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectENERGY ION-SCATTERING-
dc.subjectGATE-
dc.titleRelaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O-
dc.typeArticle-
dc.identifier.wosid000080519000028-
dc.identifier.scopusid2-s2.0-0001366250-
dc.type.rimsART-
dc.citation.volume74-
dc.citation.issue23-
dc.citation.beginningpage3510-
dc.citation.endingpage3512-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorHa, YH-
dc.contributor.nonIdAuthorLee, SY-
dc.contributor.nonIdAuthorKim, JH-
dc.contributor.nonIdAuthorBaek, DH-
dc.contributor.nonIdAuthorKim, HK-
dc.contributor.nonIdAuthorMoon, DW-
dc.type.journalArticleArticle-
dc.subject.keywordPlusENERGY ION-SCATTERING-
dc.subject.keywordPlusGATE-
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