DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, YJ | ko |
dc.contributor.author | Lee, SY | ko |
dc.contributor.author | Kim, Sehun | ko |
dc.date.accessioned | 2009-09-21T07:22:22Z | - |
dc.date.available | 2009-09-21T07:22:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-03 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.11, no.8, pp.1953 - 1960 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11396 | - |
dc.description.abstract | Reconstructions and step structures on vicinal Bi:Si(001) surfaces are studied under various substrate temperatures and Bi coverages. The observed reconstructions are (2x1), (2x2), c(4x4), and (2x7) phases. For step distributions, alternative domain configurations with single layer steps are observed. The population ratios of A terrace to B terrace depend on the substrate temperatures. The observed reconstructions and step distributions are explained by the large size of the Bi atom compared with Si, the anisotropic stress tensor, and the local atomic structure in the S-B step. | - |
dc.description.sponsorship | This work was supported in part by the Center for Molecular Science at KAIST and the Korea Science and Engineering Foundation (KOSEF) (No. 95-0501-03-01-3). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject | SI(100) SURFACE | - |
dc.subject | STRAIN RELIEF | - |
dc.subject | SI EPITAXY | - |
dc.subject | ADSORPTION | - |
dc.subject | REARRANGEMENT | - |
dc.subject | RESOLUTION | - |
dc.subject | STRESS | - |
dc.subject | GE | - |
dc.title | Reconstructions and step structures on vicinal Si(001) surfaces by interaction with Bi | - |
dc.type | Article | - |
dc.identifier.wosid | 000079096800008 | - |
dc.identifier.scopusid | 2-s2.0-0006897534 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1953 | - |
dc.citation.endingpage | 1960 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Sehun | - |
dc.contributor.nonIdAuthor | Lee, YJ | - |
dc.contributor.nonIdAuthor | Lee, SY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | SI(100) SURFACE | - |
dc.subject.keywordPlus | STRAIN RELIEF | - |
dc.subject.keywordPlus | SI EPITAXY | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordPlus | REARRANGEMENT | - |
dc.subject.keywordPlus | RESOLUTION | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | GE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.