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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Scanning tunneling microscopy study on c(4 x 4) structure of Si(100)

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dc.contributor.authorMaeng, JYko
dc.contributor.authorKim, Sehunko
dc.date.accessioned2009-09-21T07:10:48Z-
dc.date.available2009-09-21T07:10:48Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-06-
dc.identifier.citationSURFACE SCIENCE, v.482, pp.1445 - 1450-
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10203/11392-
dc.description.abstractWe have reexamined the formation and surface structure of Si(100)-c(4 x 4) obtained by hydrogen exposure using high resolution scanning tunneling microscopy (STM). The observed filled and empty state STM images are in good agreement with a recent carbon incorporated reconstruction model. We found all of Si dimers present in the c(4 x 4) unit cell are perpendicular to the underlying Si dimer row. The observation of long line missing dimer defects and SiC islands indicates that the c(4 x 4) structure observed in this work is also associated to carbon contamination. (C) 2001 Elsevier Science B.V. All rights reserved.-
dc.description.sponsorshipThis work was supported from Korea Science and Education Foundation (Contract no.: 98-0501-01-01-3) and Brain Korea 21 project.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.subjectSI(001)-
dc.subjectSURFACE-
dc.subjectRECONSTRUCTION-
dc.subjectCARBON-
dc.titleScanning tunneling microscopy study on c(4 x 4) structure of Si(100)-
dc.typeArticle-
dc.identifier.wosid000170302200115-
dc.identifier.scopusid2-s2.0-0008791288-
dc.type.rimsART-
dc.citation.volume482-
dc.citation.beginningpage1445-
dc.citation.endingpage1450-
dc.citation.publicationnameSURFACE SCIENCE-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorMaeng, JY-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorsingle crystal surfaces-
dc.subject.keywordAuthorsurface relaxation and reconstruction-
dc.subject.keywordAuthorscanning tunneling microscopy-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordAuthorcarbon-
dc.subject.keywordAuthorhydrogen atom-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusRECONSTRUCTION-
dc.subject.keywordPlusCARBON-
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