GaAs Power MESFETs for personal communications at 850MHz

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dc.contributor.authorHong, Songcheol-
dc.contributor.authorLee, JL-
dc.contributor.authorMun, JK-
dc.contributor.authorKim, H-
dc.contributor.authorKwon, OS-
dc.contributor.authorMaeng, SJ-
dc.contributor.authorLee, JJ-
dc.contributor.authorLee, HG-
dc.contributor.authorYoon, KJ-
dc.contributor.authorJeon, KI-
dc.contributor.authorKoo, KH-
dc.contributor.authorLee, CS-
dc.contributor.authorPark, SS-
dc.contributor.authorKim, DK-
dc.contributor.authorHwang, HM-
dc.contributor.authorPark, HM-
dc.contributor.authorPark, SC-
dc.date.accessioned2013-03-14T22:11:08Z-
dc.date.available2013-03-14T22:11:08Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationICVC, v., no., pp.430 - 432-
dc.identifier.urihttp://hdl.handle.net/10203/113875-
dc.languageENG-
dc.titleGaAs Power MESFETs for personal communications at 850MHz-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage430-
dc.citation.endingpage432-
dc.citation.publicationnameICVC-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorLee, JL-
dc.contributor.nonIdAuthorMun, JK-
dc.contributor.nonIdAuthorKim, H-
dc.contributor.nonIdAuthorKwon, OS-
dc.contributor.nonIdAuthorMaeng, SJ-
dc.contributor.nonIdAuthorLee, JJ-
dc.contributor.nonIdAuthorLee, HG-
dc.contributor.nonIdAuthorYoon, KJ-
dc.contributor.nonIdAuthorJeon, KI-
dc.contributor.nonIdAuthorKoo, KH-
dc.contributor.nonIdAuthorLee, CS-
dc.contributor.nonIdAuthorPark, SS-
dc.contributor.nonIdAuthorKim, DK-
dc.contributor.nonIdAuthorHwang, HM-
dc.contributor.nonIdAuthorPark, HM-
dc.contributor.nonIdAuthorPark, SC-
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EE-Conference Papers(학술회의논문)
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