DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Junghun | ko |
dc.contributor.author | Kim, Ki-jeong | ko |
dc.contributor.author | Kim, Bongsoo | ko |
dc.contributor.author | Lee, Hangil | ko |
dc.contributor.author | Kim, Sehun | ko |
dc.date.accessioned | 2009-09-21T05:39:34Z | - |
dc.date.available | 2009-09-21T05:39:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-06 | - |
dc.identifier.citation | JOURNAL OF PHYSICAL CHEMISTRY C, v.113, no.22, pp.9433 - 9435 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11370 | - |
dc.description.abstract | Chemically modified epitaxial graphene (EG) by azidotrimethylsilane (ATS) was investigated using high-resolution photoemission spectroscopy (HRPES). Through the spectral analysis, we clearly confirmed that EG is modified by thermally generated nitrene radicals and found that the bonding nature between the nitrene radicals and EG is covalent. As we observe bonding nature of N 1s peaks, we found that two distinct N peaks can be clearly distinguished in the spectra. Using a covalently bound stretched graphene (CSG) model, we elucidated that nitrene radicals adsorb on the graphene layer at two different adsorption sites. Moreover, we were able to control the band gap of EG using valence band spectra as we change the amount of the dosing of nitrene. | - |
dc.description.sponsorship | This work was supported by the Korea Research Foundation (Grant No. KRF-2006-312-C00565). One of the authors (H.L.) was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund; KRF-2008-314- C00169). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | WALLED CARBON NANOTUBES | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | 6H-SIC(0001) | - |
dc.subject | CHEMISTRY | - |
dc.title | Covalent Functionalization of Epitaxial Graphene by Azidotrimethylsilane | - |
dc.type | Article | - |
dc.identifier.wosid | 000266447600001 | - |
dc.identifier.scopusid | 2-s2.0-67149141615 | - |
dc.type.rims | ART | - |
dc.citation.volume | 113 | - |
dc.citation.issue | 22 | - |
dc.citation.beginningpage | 9433 | - |
dc.citation.endingpage | 9435 | - |
dc.citation.publicationname | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.identifier.doi | 10.1021/jp9010444 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Sehun | - |
dc.contributor.nonIdAuthor | Kim, Ki-jeong | - |
dc.contributor.nonIdAuthor | Kim, Bongsoo | - |
dc.contributor.nonIdAuthor | Lee, Hangil | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | WALLED CARBON NANOTUBES | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | 6H-SIC(0001) | - |
dc.subject.keywordPlus | CHEMISTRY | - |
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