16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | GUTIERREZAITKEN, AL | ko |
| dc.contributor.author | Yang, Kyounghoon | ko |
| dc.contributor.author | ZHANG, X | ko |
| dc.contributor.author | HADDAD, GI | ko |
| dc.contributor.author | BHATTACHARYA, P | ko |
| dc.contributor.author | LUNARDI, LM | ko |
| dc.date.accessioned | 2007-08-28T03:10:50Z | - |
| dc.date.available | 2007-08-28T03:10:50Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-11 | - |
| dc.identifier.citation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.7, no.11, pp.1339 - 1341 | - |
| dc.identifier.issn | 1041-1135 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1135 | - |
| dc.description.abstract | A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized, The p-i-n photodiode is implemented using the InGaAs base and collector layers of the I-IBT. A three-stage amplifier with a feedback resistance of 550 Ohm demonstrated a transimpedance gain of 46 dB Ohm and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz Ohm. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation. | - |
| dc.description.sponsorship | Advanced Research Projects Agency, grant MDA 972-941-0004, and US Army Research Office, grant DAAL03-92-G-0109 | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | 16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1995TE02700039 | - |
| dc.identifier.scopusid | 2-s2.0-0029403883 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 7 | - |
| dc.citation.issue | 11 | - |
| dc.citation.beginningpage | 1339 | - |
| dc.citation.endingpage | 1341 | - |
| dc.citation.publicationname | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
| dc.identifier.doi | 10.1109/68.473491 | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | GUTIERREZAITKEN, AL | - |
| dc.contributor.nonIdAuthor | ZHANG, X | - |
| dc.contributor.nonIdAuthor | HADDAD, GI | - |
| dc.contributor.nonIdAuthor | BHATTACHARYA, P | - |
| dc.contributor.nonIdAuthor | LUNARDI, LM | - |
| dc.type.journalArticle | Article | - |
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