Reduction of gap states of ternary III-V semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

Abstract

The effects of sulfur passivation on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron spectroscopy. The surfaces were simultaneously prepared through degreasing and the use of an aqueous (NH4)(2)S-x treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted negligibly with P atoms. The band bending was reduced by 0.7 eV compared to a sputter-cleaned surface. Presumably, sulfur eliminated P-vacancy-related gap states by occupying P sites and forming In-S and Ga-S bonds. By postheat treatment at 180 degrees C, S atoms were not removed from the surface and band bending was reduced further by 0.1 eV. For AlGaAs, S atoms initially reacted with Ga and As, but this treatment could not remove the Al oxide previously formed in the air. Postheat treatment at 180 degrees C simply induced S redistribution from As to Ga and As desorption, which reduced the band bending by 0.3 eV compared to the sputter-cleaned surface-a result similar to that for GaAs. (C) 1996 American Vacuum Society.