3실 분리형 광 CVD 장치에 의하여 제작된 무첨가 비정질 실리콘 박막의 기판온도 의존성Dependence of characteristics of undoped a-Si : H film prepared by 3 separated reaction chamber photo-CVD apparatus on substrate temperature
- Issue Date
- 1994-01-01
- Language
- KOR
- Citation
대한전자공학회 학술대회, v.17, no.2, pp.971 - 972
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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