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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100)

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dc.contributor.authorLim, DKko
dc.contributor.authorLee, Dko
dc.contributor.authorLee, Hko
dc.contributor.authorBae, SSko
dc.contributor.authorChoi, Jko
dc.contributor.authorKim, Sehunko
dc.contributor.authorJi, CXko
dc.contributor.authorRagan, Rko
dc.contributor.authorOhlberg, DAAko
dc.contributor.authorChang, YAko
dc.contributor.authorWilliams, RSko
dc.date.accessioned2009-09-18T06:18:53Z-
dc.date.available2009-09-18T06:18:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-03-
dc.identifier.citationNANOTECHNOLOGY, v.18, no.9, pp.649 - 657-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10203/11331-
dc.description.abstractWe investigated the formation of Pt silicide nanowires on a Si(100) surface using scanning tunnelling microscopy and high-resolution photoemission spectroscopy. Pt silicide nanowires with a tetragonal Pt2Si structure are formed along the step edges of Si(100). Pt-induced c(4 x 2) reconstructions also appear adjacent to the tetragonal Pt2Si nanowires. Formation of the Pt2Si nanowires is attributed to the anisotropic lattice mismatches between the tetragonal Pt2Si structure and Si(100). Scanning tunnelling spectroscopy data show that the nanowires are metallic. The stoichiometry of Pt silicide is confirmed by high-resolution photoemission spectroscopy.-
dc.description.sponsorshipThis work was supported by the Brain Korea 21 project, the SRC programme (Center for Nanotubes and Nanostructured Composites) of MOST/KOSEF, and the National R&D Project for Nano Science and Technology. It was also partly supported by grant no. R01-2006-000-11247-0 from the Basic Research Program of the Korea Science and Engineering Foundation, grant no. KRF-2005-070-C00063 from the Korea Research Foundation, and grant no. NSF-DMR-0097621 from US National Science Foundation.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIOP PUBLISHING LTD-
dc.subjectGD DISILICIDE NANOWIRES-
dc.subjectSI(001)-
dc.subjectFILMS-
dc.subjectMICROSCOPY-
dc.subjectPT/SI(001)-
dc.subjectGROWTH-
dc.subjectARRAYS-
dc.titleStructure and electronic properties of self-assembled Pt silicide nanowires on Si(100)-
dc.typeArticle-
dc.identifier.wosid000245219800022-
dc.identifier.scopusid2-s2.0-33947499568-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.issue9-
dc.citation.beginningpage649-
dc.citation.endingpage657-
dc.citation.publicationnameNANOTECHNOLOGY-
dc.identifier.doi10.1088/0957-4484/18/9/095706-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorLim, DK-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorLee, H-
dc.contributor.nonIdAuthorBae, SS-
dc.contributor.nonIdAuthorChoi, J-
dc.contributor.nonIdAuthorJi, CX-
dc.contributor.nonIdAuthorRagan, R-
dc.contributor.nonIdAuthorOhlberg, DAA-
dc.contributor.nonIdAuthorChang, YA-
dc.contributor.nonIdAuthorWilliams, RS-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGD DISILICIDE NANOWIRES-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusPT/SI(001)-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusARRAYS-
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