Chemically abrupt interface between Ce oxide and Fe films

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dc.contributor.authorLee, HGko
dc.contributor.authorLee, Dko
dc.contributor.authorKim, Sehunko
dc.contributor.authorKim, SGko
dc.contributor.authorHwang, CYko
dc.date.accessioned2009-09-18T05:28:02Z-
dc.date.available2009-09-18T05:28:02Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-12-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v.252, no.5, pp.1202 - 1205-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10203/11317-
dc.description.abstractA chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Cc metal. Once a Cc oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Cc metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Cc oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy. (c) 2005 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTUNNEL MAGNETORESISTANCE-
dc.subjectTHERMAL-PROPERTIES-
dc.subjectJUNCTIONS-
dc.titleChemically abrupt interface between Ce oxide and Fe films-
dc.typeArticle-
dc.identifier.wosid000233985900003-
dc.identifier.scopusid2-s2.0-27944463661-
dc.type.rimsART-
dc.citation.volume252-
dc.citation.issue5-
dc.citation.beginningpage1202-
dc.citation.endingpage1205-
dc.citation.publicationnameAPPLIED SURFACE SCIENCE-
dc.identifier.doi10.1016/j.apsusc.2005.03.129-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorLee, HG-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorKim, SG-
dc.contributor.nonIdAuthorHwang, CY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTUNNEL MAGNETORESISTANCE-
dc.subject.keywordPlusTHERMAL-PROPERTIES-
dc.subject.keywordPlusJUNCTIONS-
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