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College of Engineering(공과대학)Dept. of Chemical and Biomolecular Engineering(생명화학공학과)CBE-Conference Papers(학술회의논문)

Effect of Diluent Gas and Rapid Thermal Annealin gon the Properties of Plasma Deposited Silicon Nitride Films

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dc.contributor.authorNam, CW-
dc.contributor.authorWoo, Seong-Ihl-
dc.contributor.authorKim, YT-
dc.contributor.authorMin, SK-
dc.date.accessioned2013-03-14T20:51:21Z-
dc.date.available2013-03-14T20:51:21Z-
dc.date.created2012-02-06-
dc.date.issued1991-
dc.identifier.citationInternational Conference on VLSI and CAD, v., no., pp.356 - 359-
dc.identifier.urihttp://hdl.handle.net/10203/113155-
dc.languageENG-
dc.titleEffect of Diluent Gas and Rapid Thermal Annealin gon the Properties of Plasma Deposited Silicon Nitride Films-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage356-
dc.citation.endingpage359-
dc.citation.publicationnameInternational Conference on VLSI and CAD-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorWoo, Seong-Ihl-
dc.contributor.nonIdAuthorNam, CW-
dc.contributor.nonIdAuthorKim, YT-
dc.contributor.nonIdAuthorMin, SK-
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CBE-Conference Papers(학술회의논문)
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