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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

Temperature dependent structural changes of graphene layers on 6H-SiC(0001) surfaces

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dc.contributor.authorKim, Ki-jeongko
dc.contributor.authorLee, Hko
dc.contributor.authorChoi, JHko
dc.contributor.authorLee, HKko
dc.contributor.authorKang, THko
dc.contributor.authorKim, Bko
dc.contributor.authorKim, Sehunko
dc.date.accessioned2009-09-18T05:01:25Z-
dc.date.available2009-09-18T05:01:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-06-
dc.identifier.citationJOURNAL OF PHYSICS-CONDENSED MATTER, v.20, no.22-
dc.identifier.issn0953-8984-
dc.identifier.urihttp://hdl.handle.net/10203/11308-
dc.description.abstractWe investigated the electronic and structural properties of graphene layers grown on a 6H-SiC (Si-terminated) substrate by using core level photoemission spectroscopy (CLPES), low energy electron diffraction (LEED), and near edge x-ray absorption fine structure (NEXAFS). The angle between the plane of the graphene sheet and the SiC substrate was measured by monitoring the variation of the pi* transition in the NEXAFS spectrum with the thickness of the graphene layers. As the thickness of the graphene layers increased, the angle gradually decreased.-
dc.description.sponsorshipThis work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MOST) (No. 2007-01156) and the SRC program (Center for Nanotubes and nanostructured composites) of MOST/KOSEF, the Center of Fusion Technology for Security, the National R&D Projects for Nano Science and Technology Korea Research Grant No. KRF-2005-070-C00063, a Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-311-C00307).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIOP PUBLISHING LTD-
dc.subjectCORE-LEVEL-
dc.subjectGRAPHITE-
dc.subjectFILMS-
dc.subjectGRAPHITIZATION-
dc.subjectGAS-
dc.titleTemperature dependent structural changes of graphene layers on 6H-SiC(0001) surfaces-
dc.typeArticle-
dc.identifier.wosid000256145700045-
dc.identifier.scopusid2-s2.0-44449174123-
dc.type.rimsART-
dc.citation.volume20-
dc.citation.issue22-
dc.citation.publicationnameJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorLee, H-
dc.contributor.nonIdAuthorLee, HK-
dc.contributor.nonIdAuthorKang, TH-
dc.contributor.nonIdAuthorKim, B-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusCORE-LEVEL-
dc.subject.keywordPlusGRAPHITE-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusGRAPHITIZATION-
dc.subject.keywordPlusGAS-
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