Unidirectional Pt silicide nanowires grown on vicinal Si(100)

Abstract

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra. (C) 2008 American Institute of Physics.