0.5um 게이트길이를 갖는 고성능 GaAs DEL-doped FET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 권영세 | - |
| dc.date.accessioned | 2013-03-14T20:09:34Z | - |
| dc.date.available | 2013-03-14T20:09:34Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | 젊은 공학도를 위한 반도체 Workshop, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/112777 | - |
| dc.language | KOR | - |
| dc.title | 0.5um 게이트길이를 갖는 고성능 GaAs DEL-doped FET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 젊은 공학도를 위한 반도체 Workshop | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 권영세 | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.