Modelling and Simulation Study on CVD for SiC film
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ko, JH | - |
| dc.contributor.author | Woo, Seong-Ihl | - |
| dc.date.accessioned | 2013-03-14T20:01:59Z | - |
| dc.date.available | 2013-03-14T20:01:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988 | - |
| dc.identifier.citation | Conference on Semiconductors, Materials, Components and CAD, v., no., pp.112 - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/112706 | - |
| dc.language | ENG | - |
| dc.title | Modelling and Simulation Study on CVD for SiC film | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 112 | - |
| dc.citation.publicationname | Conference on Semiconductors, Materials, Components and CAD | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Woo, Seong-Ihl | - |
| dc.contributor.nonIdAuthor | Ko, JH | - |
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