The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J. C. Cowles, | - |
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.contributor.author | A. Guiterrez-Aitken | - |
| dc.contributor.author | Munns, G. O. | - |
| dc.contributor.author | Chen, W. L. | - |
| dc.contributor.author | Haddad, G. I. | - |
| dc.contributor.author | Bhattacharya, P. K. | - |
| dc.date.accessioned | 2013-03-14T19:51:21Z | - |
| dc.date.available | 2013-03-14T19:51:21Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | Int. Semicond. Device Research Symp., v., no., pp.787 - 790 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/112597 | - |
| dc.language | ENG | - |
| dc.title | The validity of reciprocity and the Ebers-Moll model in abrupt heterojunction bipolar transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 787 | - |
| dc.citation.endingpage | 790 | - |
| dc.citation.publicationname | Int. Semicond. Device Research Symp. | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | J. C. Cowles, | - |
| dc.contributor.nonIdAuthor | A. Guiterrez-Aitken | - |
| dc.contributor.nonIdAuthor | Munns, G. O. | - |
| dc.contributor.nonIdAuthor | Chen, W. L. | - |
| dc.contributor.nonIdAuthor | Haddad, G. I. | - |
| dc.contributor.nonIdAuthor | Bhattacharya, P. K. | - |
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