TEM study of the GaAs/Si system grown by 2-step MBE/SPE method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choo, Woong Kil | - |
| dc.date.accessioned | 2013-03-14T19:37:31Z | - |
| dc.date.available | 2013-03-14T19:37:31Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | Microsc. Semicond. Mat. conforence, April 5-8, Oxford, Inst. Phys. Conf. series 134, v., no., pp.357 - 360 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/112476 | - |
| dc.language | ENG | - |
| dc.title | TEM study of the GaAs/Si system grown by 2-step MBE/SPE method | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 357 | - |
| dc.citation.endingpage | 360 | - |
| dc.citation.publicationname | Microsc. Semicond. Mat. conforence, April 5-8, Oxford, Inst. Phys. Conf. series 134 | - |
| dc.contributor.localauthor | Choo, Woong Kil | - |
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