Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy(EBE-epitaxy) Technique
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee Chul | - |
| dc.contributor.author | Asano, T | - |
| dc.contributor.author | ishiwara, H | - |
| dc.contributor.author | Furukawa, S | - |
| dc.date.accessioned | 2013-03-14T17:48:04Z | - |
| dc.date.available | 2013-03-14T17:48:04Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988 | - |
| dc.identifier.citation | Ext. Abst. 20th Conf. on Solid State Devices and Materials, v., no., pp.291 - 294 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/111483 | - |
| dc.language | ENG | - |
| dc.title | Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy(EBE-epitaxy) Technique | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 291 | - |
| dc.citation.endingpage | 294 | - |
| dc.citation.publicationname | Ext. Abst. 20th Conf. on Solid State Devices and Materials | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Asano, T | - |
| dc.contributor.nonIdAuthor | ishiwara, H | - |
| dc.contributor.nonIdAuthor | Furukawa, S | - |
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