DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sang-Won Kang | - |
dc.date.accessioned | 2013-03-14T16:49:04Z | - |
dc.date.available | 2013-03-14T16:49:04Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1987 | - |
dc.identifier.citation | ESC, Extended Abstract, v., no., pp.241 - | - |
dc.identifier.uri | http://hdl.handle.net/10203/110929 | - |
dc.language | ENG | - |
dc.title | Reliability Characteristics of the Thin Interlevel Poly Silicon Oxide for EEPROM Device | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 241 | - |
dc.citation.publicationname | ESC, Extended Abstract | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Sang-Won Kang | - |
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