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Showing results 1 to 12 of 12

1
A new phosphorus allotrope discovered by ab initio materials design

한우현; 장기주; 김성현; 이인호, 2017 가을 학술논문발표회 및 임시총회, 한국물리학회, 2017-10

2
Atomic and electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors

한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10

3
Hybrid functional calculations for the capture process of electrons by oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10

4
Li Substitution at Alkali-site of Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries

왕지은; 김도경; 한우현; 장기주; 정영화, 2018년도 한국재료학회 추계학술대회, 한국재료학회, 2018-11-08

5
Li-assisted Na Hopping by Substitution of Li on Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries

왕지은; 정영화; 한우현; 장기주; 김도경, 2018년도 한국재료학회 춘계학술대회, 한국재료학회, 2018-05-17

6
New metastable boron allotropes on the pressure-induced transition pathway from a-B to g-B

한우현; 장기주; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06

7
Prediction of a new superconducting silicon allotrope and its chemical precursor

성하준; 장기주; 한우현; 이인호, 물리학회 2017년 가을학술논문발표회, 한국물리학회, 2017-10

8
Pressure-induced phase transition pathway from a-boron to g-boron

한우현; 장기주; 김성현; 이인호, 2017 한국물리학회 봄학술논문발표회, 한국물리학회, 2017-04

9
The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

한우현; 오영준; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06

10
The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

한우현; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04

11
The electronic properties of oxygen-related defects in amorphous In-Ga-Zn-O semiconductor

한우현; 오영준; 장기주, 제 10회 강유전체연합 심포지엄, 강유전체연구회, 2014-02

12
Theoretical study on oxygen-related defects in amorphous oxide semiconductors and novel phases of boron and phosphorus = 비정질산화물 반도체 내 산소관련 결함 및 붕소와 인의 새로운 결정상에 관한 이론연구link

Han, Woo Hyun; Chang, Kee Joo; et al, 한국과학기술원, 2018

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