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Showing results 1 to 8 of 8

1
Band-selective gap opening by a C4-symmetric orderer in a proximity-coupled heterostructure Sr2VO3FeAs

Kim, Sunghun; Ok, Jong Mok; Oh, Hanbit; Kwon, Chang Il; Zhang, Yi; Denlinger, Jonathan D.; Mo, Sung-Kwan; et al, PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.118, no.47, 2021-11

2
Effect of Charge Density Wave on the Electronic Transport in Graphene

Kim, Boram; Li, Jinshu; Park, Jeehoon; Lim, Hongsik; Myeong, Gyuho; Shin, Wongil; Kim, Seungho; et al, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.2, pp.1174 - 1180, 2024-02

3
Epitaxially integrated hierarchical ZnO/Au/SrTiO3 and ZnO/Ag/Al2O3 heterostructures: Three-dimensional plasmo-photonic nanoarchitecturing

Yoo, Youngdong; Kim, Minjung; Kim, Bongsoo, NANOMATERIALS, v.11, no.12, 2021-12

4
Interface control of bulk ferroelectric polarization

Yu, P.; Luo, W.; Yi, D.; Zhang, J. X.; Rossell, M. D.; Yang, Chan-Ho; You, L.; et al, PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.109, no.25, pp.9710 - 9715, 2012-06

5
Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

Kim, Sung Jong; Choi, Dongwon; Kim, Kyoung-Whan; Lee, Ki-Young; Kim, Duck-Ho; Hong, Seokmin; Suh, Joonki; et al, ACS NANO, v.15, no.10, pp.16395 - 16403, 2021-10

6
Magnetotransport, optical, and electronic subband properties in AlxGa1-xN/AlN/GaN heterostructures

Kim, TW; Choo, DC; Jang, YR; Yoo, KH; Jung, MH; Cho, Yong-Hoon; Lee, JH, SOLID STATE COMMUNICATIONS, v.132, pp.67 - 70, 2004-10

7
Photoelectric Memory Effect in Graphene Heterostructure Field-Effect Transistors Based on Dual Dielectrics

Choi, Hyun Ho; Park, Jaesung; Huh, Sung; Lee, Seong Kyu; Moon, Byungho; Han, Sang Woo; Hwang, Chanyong; et al, ACS PHOTONICS, v.5, no.2, pp.329 - 336, 2018-02

8
Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures

Ko, Young-Ho; Kim, Je-Hyung; Gong, Suhyun; Kim, Joosung; Kim, Taek; Cho, Yong-Hoon, ACS PHOTONICS, v.2, no.4, pp.515 - 520, 2015-04

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