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Showing results 1 to 4 of 4

1
Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors

Noh, Ji-Young; Kim, Hanchul; Nahm, Ho-Hyun; Kim, Yong-Sung; Kim, Dae Hwan; Ahn, Byung-Du; Lim, Jun-Hyung; et al, JOURNAL OF APPLIED PHYSICS, v.113, no.18, 2013-05

2
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09

3
Source of instability at the amorphous interface between InGaZnO4 and SiO2: A theoretical investigation

Song, Hochul; Kang, Youngho; Nahm, Ho Hyun; Han, Seungwu, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.252, no.8, pp.1872 - 1876, 2015-08

4
Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors

Han, Woo Hyun; Chang, Kee Joo, PHYSICAL REVIEW APPLIED, v.6, no.4, pp.044011 - 044011, 2016-10

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