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Showing results 1 to 4 of 4

1
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Noh, Hyeon-Kyun; Oh, Young-Jun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910, 2012-08

2
Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks

Kim, DY; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1628 - 1632, 2006-06

3
Reliability issues and role of defects in high-k dielectric HfO2 devices

Kang, JG; Kim, DY; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.552 - 557, 2007-03

4
The electronic properties of the interface structure between ZnO and amorphous HfO2

Ryu, Byungki; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.404, no.23-24, pp.4823 - 4826, 2009-12

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