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Showing results 1 to 9 of 9

1
Assessment and prediction of band edge locations of nitrides using a self-consistent hybrid functional

Kim, Se-Jun; Lebegue, Sebastien; Kim, Hyungjun; Kim, Won June, JOURNAL OF CHEMICAL PHYSICS, v.155, no.2, 2021-07

2
Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis

Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06

3
Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate

Cho, Yong-Hoon; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12

4
Band-gap modification by radial deformation in carbon nanotubes

Park, CJ; Kim, Yong-Hyun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.60, no.15, pp.10656 - 10659, 1999-10

5
Conjugated organic framework with three-dimensionally ordered stable structure and delocalized pi clouds

Guo, Jia; Xu, Yanhong; Jin, Shangbin; Chen, Long; Kaji, Toshihiko; Honsho, Yoshihito; Addicoat, Matthew A.; et al, NATURE COMMUNICATIONS, v.4, 2013-11

6
Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device

Lee, Yeon-Il; Youn, Jun-Ho; Ryu, Mi-Sun; Kim, Jung-Ho; Jang, Jin; Moon, Hie-Tae, JOURNAL OF APPLIED PHYSICS, v.108, no.5, 2010-09

7
Itinerant ferromagnetism in heterostructured C/BN nanotubes

Choi, J; Kim, Yong-Hyun; Chang, Kee-Joo; Tomanek, D, PHYSICAL REVIEW B, v.67, no.12, pp.125421 - 125421, 2003-03

8
Photoreflectance study of etching and annealing effect on modulation-doped AlGaAs/GaAs heterostructure

Hwang, I; Kim, Jae Eun; Park, Hae Yong; Noh, SK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S131 - S134, 1997-06

9
ZnO-CuO Core-Hollow Cube Nanostructures for Highly Sensitive Acetone Gas Sensors at the ppb Level

Lee, Jae Eun; Lim, Chan Kyu; Park, Hyung Ju; Song, Hyunjoon; Choi, Sung-Yool; Lee, Dae-Sik, ACS APPLIED MATERIALS & INTERFACES, v.12, no.31, pp.35688 - 35697, 2020-08

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