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Browse "College of Natural Sciences(자연과학대학)" by Author Schmidt, TJ

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Showing results 1 to 20 of 20

1	A comparison of the optical characteristics of AlGaN, GaN, and InGaN thin films Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Lam, JB; Song, JJ; Keller, S; Mishra, UK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.216, no.1, pp.227 - 231, 1999-11
2	Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; et al, Mat. Res. Soc. Symp. Proc., 1998
3	Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; et al, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999
4	Characterization of InGaN/GaN lasing structures for high temperature device applications Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Proceedings of Conference on Laser and Electro-Optics (CLEO)/IQEC’98, OSA Technical Digest Series, pp.223 -, 1998
5	Comparison of spontaneous and stimulated emission from UV-blue photonic materials Little, BD; Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Lam, JB; Song, JJ; Yang, W; et al, pp.290 -, 1999
6	Critical issues of localization in the development of InGaN/GaN laser diodes Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, pp.286 -, 1999
7	Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructrues Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, The 3rd International Conference on Nitride Semiconductors (ICNS-3), 1999
8	Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.5, pp.560 - 562, 1998-08
9	High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Bidnyk, S; Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; et al, APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625, 1998-03
10	Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998
11	Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999
12	Linear and nonlinear optical properties of In(x)Ga(1-x)N/GaN heterostructures Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; et al, PHYSICAL REVIEW B, v.61, no.11, pp.7571 - 7588, 2000-03
13	Nonlinear optical spectroscopy of band tail states in highly excited InGaN Schmidt, TJ; Cho, Yong-Hoon; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, pp.57 -, 1999
14	Optical characteristics of AlGaN, GaN, and InGaN thin films: a comparison and temperature dependence Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Lam, JB; Song, JJ; Keller, S; Denbaars, SP; et al, The 3rd International Conference on Nitride Semiconductors (ICNS-3), pp.77 -, 1999
15	Optical Characteristics of Group III-Nitride Quantum Structures Cho, Yong-Hoon; Jhe, W; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ, Proceedings of the 3rd Korea-China Joint Workshop on Advanced Materials, pp.351 -, 1999
16	Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.13, pp.1892 - 1894, 1998-09
17	Room-temperature deep-ultraviolet-stimulated emission Al(x)Ga(1-x)N thin films grown on sapphire Schmidt, TJ; Cho, Yong-Hoon; Song, JJ; Yang, W, APPLIED PHYSICS LETTERS, v.74, no.2, pp.245 - 247, 1999-01
18	Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; et al, APPLIED PHYSICS LETTERS, v.73, no.25, pp.3689 - 3691, 1998-12
19	Stimulated emission in GaN thin films in the temperature range of 300-700 K Bidnyk, S; Little, BD; Schmidt, TJ; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Goldenberg, B; et al, JOURNAL OF APPLIED PHYSICS, v.85, no.3, pp.1792 - 1795, 1999-02
20	Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Krasinski, J; Song, JJ; Keller, S; Mishra, UK; et al, Mat. Res. Soc., 1998

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