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Showing results 1 to 6 of 6

1
Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

Cho, Yong-Hoon; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; et al, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2578 - 2580, 2003-09

2
Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Hwang, JS; Gokarna, A; Cho, Yong-Hoon; Son, JK; Lee, SN; Sakong, T; Paek, HS; et al, JOURNAL OF APPLIED PHYSICS, v.102, pp.1637 - 1639, 2007-07

3
Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Son, JK; Lee, SN; Sakong, T; Paek, HS; Nam, O; Park, Y; Hwang, JS; et al, JOURNAL OF CRYSTAL GROWTH, v.287, pp.558 - 561, 2006-01

4
Influence of thermal damage and the interruption time on the optical properties of InGaN quantum wall structures

Cho, Yong-Hoon; Son, CW; Kim, JY; Kim, BM; Lee, WS; Lee, SN; Son, JK; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, pp.L792 - L795, 2004-04

5
Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; et al, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12

6
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Park, SH; Kim, J; Jeon, H; Sakong, T; Lee, SN; Chae, S; Park, Y; et al, APPLIED PHYSICS LETTERS, v.83, no.11, pp.2121 - 2123, 2003-09

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