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Showing results 1 to 7 of 7

1
Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different In compositions

Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; Denbaars, SP, Mat. Res. Soc. Symp. Proc, 2000

2
Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions

Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.12 - 7, 2000

3
Effects of substrate misorientation on the formation and characteristics of self-assembled InP/InGaP quantum dots

Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.4A, pp.366 - 368, 1998-04

4
Effects of substrate orientation on formation and characteristics of self-assembeld InP/InGaP quantum dot lasers

Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG; Choo, AG; Kim, TI, Optoelectronics and Communications Conference (OECC) ’97 Technical Digest, pp.470 -, 1997

5
Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy

Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG; Yu, JS; Choo, AG; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162, 1997-06

6
Optical properties and deep levels in annealed Si1-xMnx bulk materials

Kwon, YH; Kang, TW; Park, CJ; Cho, HY; Kim, TW; Lee, JY; Wang, KL; et al, SOLID STATE COMMUNICATIONS, v.140, pp.14 - 17, 2006-10

7
Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions

Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; DenBaars, SP, APPLIED PHYSICS LETTERS, v.75, no.17, pp.2545 - 2547, 1999-10

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