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1
Laser action in GaN pyramids grown on, (111) silicon by selective lateral overgrowth

Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, APPLIED PHYSICS LETTERS, v.73, no.16, pp.2242 - 2244, 1998-10

2
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon

Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, Mat. Res. Soc., 1998

3
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon

Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 48, 1999

4
Stimulated emission in GaN thin films in the temperature range of 300-700 K

Bidnyk, S; Little, BD; Schmidt, TJ; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Goldenberg, B; et al, JOURNAL OF APPLIED PHYSICS, v.85, no.3, pp.1792 - 1795, 1999-02

5
Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K

Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Krasinski, J; Song, JJ; Keller, S; Mishra, UK; et al, Mat. Res. Soc., 1998

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