Showing results 2 to 15 of 15
Compensation mechanism for N acceptors in ZnO Lee, EC; Kim, YS; Jin, YG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.64, no.8, pp.085120 - 085120, 2001-08 |
Computational analysis of the contributions to the piezoelectric coefficient e(33) in ZnO nanowires: first-principles calculations Kim, Seong Min; Kim, Tae Yun; Lee, Jung-Hoon; Kim, Sang-Woo; Ha, Jaewook; Kim, Jin-Baek, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.13, no.4, pp.983 - 988, 2014-12 |
Conductive and ferromagnetic contributions of H in ZnCoO using H-2 hot isostatic pressure Cho, Yong Chan; Lee, Seunghun; Nahm, Ho Hyun; Kim, Su Jae; Park, Chul Hong; Lee, Su Yeon; Kim, Sung-Kyu; et al, APPLIED PHYSICS LETTERS, v.100, no.11, 2012-03 |
Continuum model of the potential of charge carriers in a bent piezoelectric ZnO nanowire: analytic and numerical study Kim, Seong Min; Ha, Jaewook; Kim, Jin-Baek, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.15, no.2, pp.545 - 549, 2016-06 |
Efficient second harmonic generation in ZnO nanorod arrays with broadband ultrashort pulses Das, Susanta Kumar; Bock, Martin; O'Neill, Christopher; Grunwald, Ruediger; Lee, Kyung Moon; Lee, Hwang Woon; Lee, Soonil; et al, APPLIED PHYSICS LETTERS, v.93, no.18, 2008-11 |
Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)(m) Lee, W. -J.; Ryu, B.; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.404, no.23-24, pp.4794 - 4796, 2009-12 |
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09 |
First-principles study of hydrogen impurity in HgO Choi, M; Nahm, Ho Hyun; Park, CH, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, pp.S304 - S308, 2005-09 |
Intracellular Gold Nanoparticles Increase Neuronal Excitability and Aggravate Seizure Activity in the Mouse Brain Jung, Seungmoon; Bang, Minji; Kim, Byung Sun; Lee, Sungmun; Kotov, Nicholas A.; Kim, Bongsoo; Jeon, Daejong, PLOS ONE, v.9, no.3, 2014-03 |
Metal-induced n(+)/n homojunction for ultrahigh electron mobility transistors Park, Ji-Min; Kim, Hyoung-Do; Joh, Hongrae; Jang, Seong Cheol; Park, Kyung; Park, Yun Chang; Nahm, Ho-Hyun; et al, NPG ASIA MATERIALS, v.12, no.1, pp.81, 2020-12 |
p-type doping and compensation in ZnO Lee, WJ; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, pp.196 - 201, 2008-07 |
Possible p-type doping with group-I elements in ZnO Lee, EC; Chang, Kee-Joo, PHYSICAL REVIEW B, v.70, no.11, pp.115210 - 115210, 2004-09 |
The presence of a (1 x 1) oxygen overlayer on ZnO(0001) surfaces and at Schottky interfaces Schlepuetz, Christian M.; Yang, Yongsoo; Husseini, Naji S.; Heinhold, Robert; Kim, Hyung-Suk; Allen, Martin W.; Durbin, Steven M.; et al, JOURNAL OF PHYSICS-CONDENSED MATTER, v.24, no.9, 2012-03 |
Ultrafast third-order optical nonlinearities of vertically-aligned ZnO nanorods Lee, H. W.; Lee, K. M.; Lee, S.; Koh, K. H.; Park, J. -Y.; Kim, K.; Rotermund, Fabian Marcel, CHEMICAL PHYSICS LETTERS, v.447, no.1-3, pp.86 - 90, 2007-10 |
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