DSpace at KOASAS: Microstructural characterization of heterointerfaces in MOCVD grown InGaAs/GaAs strained-layer system using cross section transmission electron micros

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Microstructural characterization of heterointerfaces in MOCVD grown InGaAs/GaAs strained-layer system using cross section transmission electron micros

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Park, M. C. / Park, HyoHoon researcher / Kwon, O. J.

Issue Date: 1993-04-05

Language: ENG

Citation: Inst. Phys. the Royal Microscopical Society Conference: Microscopy of Semiconducting Materials 1993, pp.481 - 484

URI: http://hdl.handle.net/10203/109722

Appears in Collection: EE-Conference Papers(학술회의논문)

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Microstructural characterization of heterointerfaces in MOCVD grown InGaAs/GaAs strained-layer system using cross section transmission electron micros

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