Poly(5-((2-trimethylsilyl-2-propyl)oxycarbonyl)-norbornene-co-maleic anhydride) for 193-nm lithography
A copolymer of 5-((2-trimethylsilyl-2-propyl)oxycarbonyl)-norbornene and maleic anhydride) was synthesized and evaluated as a chemically amplified resist for ArF lithography. The polymer has excellent transmittance at 193 nm and possesses good thermal stability up to 195 degrees C, whereas in the presence of an acid the cleavage of the 2-trimethylsilyl-2-propyl ester group begins at 76 degrees C in a catalytic manner. The 0.18 mu m line and space patterns were obtained at a dose of 10 mJ cm(-2) using an ArF excimer laser stepper. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.
- Publisher
- ELSEVIER SCI LTD
- Issue Date
- 2000-08
- Language
- English
- Article Type
- Article
- Keywords
POLY(2-TRIMETHYLSILYL-2-PROPYL METHACRYLATE); ARF LITHOGRAPHY; PHOTORESIST; DESIGN; RESIST
- Citation
POLYMER, v.41, no.18, pp.6939 - 6942
- ISSN
- 0032-3861
- Appears in Collection
- CH-Journal Papers(저널논문)
- Files in This Item
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