The adhesion of low pressure chemically vapor deposited thungsten films on silicion and SiO2 for SiH4-H2-WF6 and H2-WF6 processes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Chong-Ook | - |
| dc.date.accessioned | 2013-03-14T13:02:00Z | - |
| dc.date.available | 2013-03-14T13:02:00Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991-04-01 | - |
| dc.identifier.citation | Elsevier Sequoia, v., no., pp.167 - 175 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/108966 | - |
| dc.language | ENG | - |
| dc.title | The adhesion of low pressure chemically vapor deposited thungsten films on silicion and SiO2 for SiH4-H2-WF6 and H2-WF6 processes | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 167 | - |
| dc.citation.endingpage | 175 | - |
| dc.citation.publicationname | Elsevier Sequoia | - |
| dc.contributor.localauthor | Park, Chong-Ook | - |
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.