DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rieh, JS | ko |
dc.contributor.author | Klotzkin, D | ko |
dc.contributor.author | Qasaimeh, Q | ko |
dc.contributor.author | Lu, LH | ko |
dc.contributor.author | Yang, Kyounghoon | ko |
dc.contributor.author | Katehi, LPB | ko |
dc.contributor.author | Bhattacharya, P | ko |
dc.contributor.author | Croke, ET | ko |
dc.date.accessioned | 2007-08-21T08:05:54Z | - |
dc.date.available | 2007-08-21T08:05:54Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-03 | - |
dc.identifier.citation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417 | - |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1087 | - |
dc.description.abstract | Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported, SiGe-Si technology has been developed leading to SiGe-Si HBT's with f(T) = 23 GHz and f(max) = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at lambda = 850 nm and bandwidth of 450 MHz, SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB.Omega and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz. | - |
dc.description.sponsorship | NASA-Cleveland under Grant NAG3-1903 and by the Air Force of Scientific Research under Grant F49620-95-1-0013 | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | 1.3 MU-M | - |
dc.subject | PHOTODETECTORS | - |
dc.subject | PHOTODIODE | - |
dc.title | Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers | - |
dc.type | Article | - |
dc.identifier.wosid | 000072160500033 | - |
dc.identifier.scopusid | 2-s2.0-0032023679 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 415 | - |
dc.citation.endingpage | 417 | - |
dc.citation.publicationname | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.identifier.doi | 10.1109/68.661428 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.contributor.nonIdAuthor | Rieh, JS | - |
dc.contributor.nonIdAuthor | Klotzkin, D | - |
dc.contributor.nonIdAuthor | Qasaimeh, Q | - |
dc.contributor.nonIdAuthor | Lu, LH | - |
dc.contributor.nonIdAuthor | Katehi, LPB | - |
dc.contributor.nonIdAuthor | Bhattacharya, P | - |
dc.contributor.nonIdAuthor | Croke, ET | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | monolithic integration | - |
dc.subject.keywordAuthor | photoreceivers | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordPlus | 1.3 MU-M | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | PHOTODIODE | - |
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