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Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

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dc.contributor.authorRieh, JSko
dc.contributor.authorKlotzkin, Dko
dc.contributor.authorQasaimeh, Qko
dc.contributor.authorLu, LHko
dc.contributor.authorYang, Kyounghoonko
dc.contributor.authorKatehi, LPBko
dc.contributor.authorBhattacharya, Pko
dc.contributor.authorCroke, ETko
dc.date.accessioned2007-08-21T08:05:54Z-
dc.date.available2007-08-21T08:05:54Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-03-
dc.identifier.citationIEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417-
dc.identifier.issn1041-1135-
dc.identifier.urihttp://hdl.handle.net/10203/1087-
dc.description.abstractFabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported, SiGe-Si technology has been developed leading to SiGe-Si HBT's with f(T) = 23 GHz and f(max) = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at lambda = 850 nm and bandwidth of 450 MHz, SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB.Omega and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.-
dc.description.sponsorshipNASA-Cleveland under Grant NAG3-1903 and by the Air Force of Scientific Research under Grant F49620-95-1-0013en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subject1.3 MU-M-
dc.subjectPHOTODETECTORS-
dc.subjectPHOTODIODE-
dc.titleMonolithically integrated SiGe-Si PIN-HBT front-end photoreceivers-
dc.typeArticle-
dc.identifier.wosid000072160500033-
dc.identifier.scopusid2-s2.0-0032023679-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue3-
dc.citation.beginningpage415-
dc.citation.endingpage417-
dc.citation.publicationnameIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.identifier.doi10.1109/68.661428-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorRieh, JS-
dc.contributor.nonIdAuthorKlotzkin, D-
dc.contributor.nonIdAuthorQasaimeh, Q-
dc.contributor.nonIdAuthorLu, LH-
dc.contributor.nonIdAuthorKatehi, LPB-
dc.contributor.nonIdAuthorBhattacharya, P-
dc.contributor.nonIdAuthorCroke, ET-
dc.type.journalArticleArticle-
dc.subject.keywordAuthormonolithic integration-
dc.subject.keywordAuthorphotoreceivers-
dc.subject.keywordAuthorSiGe-
dc.subject.keywordPlus1.3 MU-M-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordPlusPHOTODIODE-
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