DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Joo, MS | - |
dc.contributor.author | Park, YJ | - |
dc.contributor.author | Kim, JC | - |
dc.date.accessioned | 2013-03-14T12:10:33Z | - |
dc.date.available | 2013-03-14T12:10:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-02-15 | - |
dc.identifier.citation | 1st Korean Semiconductor Tech. Symp., v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/108537 | - |
dc.language | ENG | - |
dc.title | New breakdown mechanism of ultra thin gate oxides under ballistic transport | - |
dc.title.alternative | New breakdown mechanism of ultra thin gate oxides under ballistic transport | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | 1st Korean Semiconductor Tech. Symp. | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Lee, SH | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.contributor.nonIdAuthor | Park, YJ | - |
dc.contributor.nonIdAuthor | Kim, JC | - |
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