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College of Natural Sciences(자연과학대학)Dept. of Chemistry(화학과)CH-Journal Papers(저널논문)

One-dimensional chain structure produced by Ce on vicinal Si(100)

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dc.contributor.authorLee, Hko
dc.contributor.authorLee, Dko
dc.contributor.authorLim, DKko
dc.contributor.authorKim, Sehunko
dc.contributor.authorHwang, Cko
dc.date.accessioned2009-08-25T01:14:03Z-
dc.date.available2009-08-25T01:14:03Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-03-
dc.identifier.citationSURFACE SCIENCE, v.600, no.6, pp.1283 - 1289-
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10203/10733-
dc.description.abstractOne-dimensional Ce nanowires have been grown on a single-domain vicinal Si(100) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Cc coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Cc nanowires along the step edges on the vicinal Si(100) substrate at 580 degrees C. (c) 2006 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipthe KOSEF through the Center for Nanotubes and Nanostructured Composites, the Brain Korea 21 Project, the Advanced Backbone IT Technology Development Project of the Ministry of Information and Communication, the National R&D Project for Nanoscience and Nanotechnology. The authors acknowledge the partial financial supports provided by the Korea Science and Engineering Foundation and the Ministry of Science and Technology through the Frontier Research project.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE BV-
dc.subjectSCANNING-TUNNELING MICROSCOPY-
dc.subjectDISILICIDE NANOWIRES-
dc.subjectSI(001) SURFACES-
dc.subjectSTEPS-
dc.subjectSI(111)-
dc.subjectGROWTH-
dc.subjectNANOSTRUCTURES-
dc.subjectINTERFACE-
dc.subjectSILICIDE-
dc.subjectSTATE-
dc.titleOne-dimensional chain structure produced by Ce on vicinal Si(100)-
dc.typeArticle-
dc.identifier.wosid000236455100016-
dc.identifier.scopusid2-s2.0-33644973220-
dc.type.rimsART-
dc.citation.volume600-
dc.citation.issue6-
dc.citation.beginningpage1283-
dc.citation.endingpage1289-
dc.citation.publicationnameSURFACE SCIENCE-
dc.identifier.doi10.1016/j.susc.2006.01.016-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorLee, H-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorLim, DK-
dc.contributor.nonIdAuthorHwang, C-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSCANNING-TUNNELING MICROSCOPY-
dc.subject.keywordPlusDISILICIDE NANOWIRES-
dc.subject.keywordPlusSI(001) SURFACES-
dc.subject.keywordPlusSTEPS-
dc.subject.keywordPlusSI(111)-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusSILICIDE-
dc.subject.keywordPlusSTATE-
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