A New Experimental Method (E-PLOT) to Characterize the Substrate-current and the Saturation-voltage of Fresh and Hot-Electron-Damaged nMOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Kwyro | - |
| dc.contributor.author | Kim, S.-H. | - |
| dc.contributor.author | Min, K.-S. | - |
| dc.contributor.author | Hong, S.-W. | - |
| dc.date.accessioned | 2013-03-14T06:20:42Z | - |
| dc.date.available | 2013-03-14T06:20:42Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992 | - |
| dc.identifier.citation | Electron Devices and Materials Symposium, v., no., pp.601 - 604 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/106082 | - |
| dc.language | ENG | - |
| dc.title | A New Experimental Method (E-PLOT) to Characterize the Substrate-current and the Saturation-voltage of Fresh and Hot-Electron-Damaged nMOSFET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 601 | - |
| dc.citation.endingpage | 604 | - |
| dc.citation.publicationname | Electron Devices and Materials Symposium | - |
| dc.identifier.conferencecountry | Taiwan, Province of China | - |
| dc.identifier.conferencecountry | Taiwan, Province of China | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Kim, S.-H. | - |
| dc.contributor.nonIdAuthor | Min, K.-S. | - |
| dc.contributor.nonIdAuthor | Hong, S.-W. | - |
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