Electrical Properties and Crystal Structure of the BST thin Film Prepared on Platinized Silicon by RF Magnetron Sputtering
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Ho Gi | - |
| dc.date.accessioned | 2013-03-14T05:25:27Z | - |
| dc.date.available | 2013-03-14T05:25:27Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-01-01 | - |
| dc.identifier.citation | Proceeding of the 11th Korea-Japan Seminar on New Ceramics, 1994, v., no., pp.261 - 265 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/105667 | - |
| dc.language | ENG | - |
| dc.title | Electrical Properties and Crystal Structure of the BST thin Film Prepared on Platinized Silicon by RF Magnetron Sputtering | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 261 | - |
| dc.citation.endingpage | 265 | - |
| dc.citation.publicationname | Proceeding of the 11th Korea-Japan Seminar on New Ceramics, 1994 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Kim, Ho Gi | - |
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