DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyungjun | ko |
dc.contributor.author | Jang, Seung Soon | ko |
dc.contributor.author | Kiehl, Richard A. | ko |
dc.contributor.author | Goddard, William A. | ko |
dc.date.accessioned | 2013-03-13T06:17:27Z | - |
dc.date.available | 2013-03-13T06:17:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.9, pp.3722 - 3730 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10203/104627 | - |
dc.description.abstract | We investigate here a possible mechanism for the room temperature negative differential resistance (NDR) in the Au/AN-OPE/RS/Hg self-assembled monolayer (SAM) system, where AN-OPE = 2'-amino,5'-nitro-oligo(phenylene ethynylene) and RS is a C(14) alkyl thiolate. Kiehl and co-workers showed that this molecular system leads to NDR with hysteresis and sweep-rate-dependent position and amplitude in the NDR peak. To investigate a molecular basis for this interesting behavior, we combine first-principles quantum mechanics (QM) and mesoscale lattice Monte Carlo methods to simulate the switching as a function of voltage and voltage rate, leading to results consistent with experimental observations. This simulation shows how the structural changes at the microscopic level lead to the NDR and sweep-rate-dependent macroscopic I V curve observed experimentally, suggesting a microscopic model that might aid in designing improved NDR systems. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | MOLECULAR JUNCTIONS | - |
dc.subject | CONDUCTANCE | - |
dc.subject | TRANSPORT | - |
dc.subject | DIODE | - |
dc.subject | MODEL | - |
dc.title | Negative Differential Resistance of Oligo(Phenylene Ethynylene) Self-Assembled Monolayer Systems: The Electric-Field-Induced Conformational Change Mechanism | - |
dc.type | Article | - |
dc.identifier.wosid | 000287833200029 | - |
dc.identifier.scopusid | 2-s2.0-79952285450 | - |
dc.type.rims | ART | - |
dc.citation.volume | 115 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 3722 | - |
dc.citation.endingpage | 3730 | - |
dc.citation.publicationname | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.identifier.doi | 10.1021/jp1114916 | - |
dc.contributor.localauthor | Kim, Hyungjun | - |
dc.contributor.nonIdAuthor | Jang, Seung Soon | - |
dc.contributor.nonIdAuthor | Kiehl, Richard A. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MOLECULAR JUNCTIONS | - |
dc.subject.keywordPlus | CONDUCTANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DIODE | - |
dc.subject.keywordPlus | MODEL | - |
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