Improved Charge Pump with Reduced Reverse Current

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dc.contributor.authorGwak, Kiukko
dc.contributor.authorLee, Sang-Gugko
dc.contributor.authorRyu, Seung-Takko
dc.date.accessioned2013-03-13T04:29:33Z-
dc.date.available2013-03-13T04:29:33Z-
dc.date.created2012-12-02-
dc.date.created2012-12-02-
dc.date.issued2012-09-
dc.identifier.citationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.12, no.3, pp.353 - 359-
dc.identifier.issn1598-1657-
dc.identifier.urihttp://hdl.handle.net/10203/104465-
dc.description.abstractA highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a 0.35 mu m 18 V CMOS technology. The proposed architecture shows 1.6 V similar to 3.5 V higher output voltage compared with the previously reported architecture.-
dc.languageEnglish-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleImproved Charge Pump with Reduced Reverse Current-
dc.typeArticle-
dc.identifier.wosid000313339100013-
dc.identifier.scopusid2-s2.0-84867691823-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue3-
dc.citation.beginningpage353-
dc.citation.endingpage359-
dc.citation.publicationnameJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.identifier.doi10.5573/JSTS.2012.12.3.353-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.localauthorRyu, Seung-Tak-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCharge pump-
dc.subject.keywordAuthorReverse current-
dc.subject.keywordAuthorDC-DC converter-
dc.subject.keywordAuthorMEMS microphone-
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