Structural and electrical properties of transparent conducting Al2O3-doped ZnO thin films using off-axis DC magnetron sputtering

Abstract

Structural and electrical properties of off-axis DC magnetron sputtered Al2O3-doped ZnO (AZO) films were systematically investigated as a function of deposition distance from the center. With increasing distance, the AZO films showed an enhanced crystallinity and a denser microstructure with a smooth surface. The AZO film sputtered at the edge of the deposition stage (similar to 6 cm away from the center) showed the highest mobility (similar to 10.1 cm(2)/V s) and the lowest resistivity (similar to 2 x 10(-3) Omega cm) due to the high plasma and thermal power density, which was suitable for transparent conducting oxide applications. (c) 2012 Elsevier B.V. All rights reserved.