DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Kyung-Min | ko |
dc.contributor.author | Kang, Seung-Mo | ko |
dc.contributor.author | Ahn, Byung-Tae | ko |
dc.date.accessioned | 2013-03-12T21:26:25Z | - |
dc.date.available | 2013-03-12T21:26:25Z | - |
dc.date.created | 2012-08-22 | - |
dc.date.created | 2012-08-22 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.12, no.6, pp.1454 - 1458 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/103567 | - |
dc.description.abstract | Metal-induced crystallization method is one of the favorable non-laser crystallization methods for thinfilm transistors in large-area displays. However, it is necessary to reduce metal contamination in the film to lower leakage current for the device applications. A new two-step crystallization method, consisting of a nucleation step by AlCl3 vapor-induced crystallization and a grain growth step by a pulsed rapid thermal annealing, has been proposed to increase the grain size and reduce the residual metal contamination in crystallized poly-Si films. The grain size of the poly-Si film crystallized by the VIC + PRTA two-step crystallization process was as large as 70 mu m. Furthermore, the Al concentration in the poly-Si film was reduced by two orders of magnitude from 1 x 10(20) cm(-3) by VIC only process to 1.4 x 10(18) cm(-3) by the two-step process. As a result, the minimum leakage current of poly-Si TFTs using the poly-Si film prepared by the two-step process was reduced from 1.9 x 10(-10) A/mu m to 2.8 x 10(-11) A/mu m at a drain voltage of 5 V, without carrier mobility degradation. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | POLY-SI TFTS | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | LEAKAGE CURRENT | - |
dc.subject | PERFORMANCE | - |
dc.subject | TRANSISTORS | - |
dc.title | Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000306420500008 | - |
dc.identifier.scopusid | 2-s2.0-84863983036 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1454 | - |
dc.citation.endingpage | 1458 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2012.04.010 | - |
dc.contributor.localauthor | Ahn, Byung-Tae | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Polycrystalline film | - |
dc.subject.keywordAuthor | Crystallization of a-Si film | - |
dc.subject.keywordAuthor | Vapor induced crystallization | - |
dc.subject.keywordAuthor | Pulsed rapid thermal annealing | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordPlus | POLY-SI TFTS | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | LEAKAGE CURRENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
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