Temperature induced delocalization of charge carriers and metallic phase in Co0.6Sn0.4Fe2O4 nanoparticles

Cited 35 time in webofscience Cited 0 time in scopus
  • Hit : 320
  • Download : 12
Thermally induced semiconductor to metal transition has been investigated for tin doped cobalt ferrite nanoparticles using impedance spectroscopy in a wide frequency range (100 Hz-2MHz) from 300K to 400K. In addition dc measurements are carried out in temperature range from 285K to 410K. Temperature dependence of impedance spectroscopy and dc resistivity reveal semiconductor to metal transition around 360 K. Metallic nature of the system above 360K has been attributed to dominancy of delocalized charge carriers Fe3+-Fe2+/Co3+-Co2+ interactions over localized charge carriers Fe-3-O2--Fe3+/Co2+-O2--Co2+ interactions. Interesting temperature dependent electrical behavior of the grain boundaries is reported and has been discussed in term of depletion space-charge layer in the vicinity of grain boundaries. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754559]
Publisher
AMER INST PHYSICS
Issue Date
2012-09
Language
English
Article Type
Article
Keywords

BOUNDARY DEFECT CHEMISTRY; ACCEPTOR-DOPED TITANATES; GRAIN-BOUNDARY; COFE2O4 POWDERS; CONDUCTIVITY; STATE; LAYER; SIZE

Citation

JOURNAL OF APPLIED PHYSICS, v.112, no.6

ISSN
0021-8979
DOI
10.1063/1.4754559
URI
http://hdl.handle.net/10203/103134
Appears in Collection
NE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 35 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0